NCE60P04Y SOT23-3L P-Channel MOSFET, Original Stock

This electronic component is a P-Channel MOSFET housed in a compact SOT23-3L package, ideal for applications requiring efficient power management. The component offers reliable performance with low on-resistance and high-speed switching capabilities, making it suitable for a range of low-voltage applications. Its compact size and original stock quality ensure ease of integration into various electronic circuits, providing superior control in small form factor designs. Encapsulation: SOT23-3L FET Type: P-channel Drain-source Voltage (Vdss): -60V Drain Current (Id): -4A Drain-Source On-Resistance (RDS On): 106mΩ Gate-Source Voltage (Vgs): ±20 V Gate Charge (Qg): 25nC Reverse Recovery Time: 25nS Operating Temperature Range: -55 To 150 ℃ Installation Type: Patches Application Areas: 3C Digital Conductivity Method: Enhanced Features: Design for High-Density Batteries with Ultra-Low Rdson Manufacture country: China Instructions included: No